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위치 및 연락처
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성명 류한열 ( 柳漢烈 / RYU HANYOUL )
소속 물리학과
E-Mail hanryu@inha.ac.kr
연구실 전화 032-860-9200
임용일자 2008.03.01
직급 교수
연구실명 반도체 광학 연구실
세부전공 반도체 레이저, LED, 나노광학, Silicon photonics
학력  1996.02 한국과학기술원(학사)/물리학과
 1998.02 한국과학기술원(석사)/물리학과
 2002.02 한국과학기술원(박사)/물리학과
경력  2002.03~2003.07 한국과학기술원/연수연구원
 2002.07~2003.07 NTT Basic Research Laboratories/Research Associate
 2003.08~2008.02 삼성종합기술원/전문연구원
연구업적
학위논문
주요학술논문
- Modeling and simulation of efficiency droop in GaN-based blue lightemitting diodes incorporating the effect of reduced active volume of InGaN quantum wells, CURRENT APPLIED PHYSICS, 17, 1298~1302, 2017.
- Comparison of the Optimum Number of Quantum Wells in GaN-Based Blue Light-Emitting Diodes Grown on Sapphire and Si(111) Substrates, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 17권 6호, 4235~4238, 2017.
- Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation, NANOSCALE RESEARCH LETTERS, 12, 366-1~366-7, 2017.
- A comparative study of efficiency droop and internal electric field for InGaN blue light-emitting diodes on silicon and sapphire substrates, SCIENTIFIC REPORTS, 7, 44814-1~44814-9, 2017.
- GaN 기반 청색 레이저 다이오드에 의한 비정질 실리콘의 결정화 특성, LED학회지, 8권 2호, 13~17, 2017.
- Negative characteristic temperature of GaN-based blue laser diode investigated by numerical simulation, OPTICAL AND QUANTUM ELECTRONICS, 49, 30-1~30-6, 2017.
- Evaluation of the temperature-dependent internal quantum efficiency and the light-extraction efficiency in a GaN-based blue light-emitting diode by using a rate equation model, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 69권 8호, 1286~1289, 2016.
- InGaAs/GaAs quantum well intermixing using proton irradiation for non-absorbing mirror, CURRENT APPLIED PHYSICS, 16권 9호, 1005~1008, 2016.
- A Study of Piezoelectric Field Related Strain Difference in GaN-Based Blue Light-Emitting Diodes Grown on Silicon(111) and Sapphire Substrates, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 16권 2호, 1798~1801, 2016.
- Investigation of the Purcell effect in GaN-based vertical LED structures using FDTD simulation, OPTICAL AND QUANTUM ELECTRONICS, 48권 1호, , 2016.
- Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior, AIP ADVANCES, 5권 10호, 107104-1~107104-6, 2015.
- Relationship between threading dislocation and the optical properties in GaN-based LEDs on Si substrates, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 67권 7호, L1085~L1088, 2015.
- Modification of internal quantum efficiency and efficiency droop in GaN-based flip-chip light-emitting diodes via the Purcell effect, OPTICS EXPRESS, 23권 19호, A1157~A1166, 2015.
- Effect of Light Absorption in InGaN/GaN Vertical Light-Emitting Diodes, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 15권 7호, 5135~5139, 2015.
- Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 15권 7호, 5264~5266, 2015.
- 근자외선 레이저 다이오드를 이용한 LED 형광체의 효율 평가, LED학회지, 7권 1호, , 2015.
- Analysis of the Temperature Dependence of Phosphor Conversion Efficiency in White Light-Emitting Diodes, JOURNAL OF THE OPTICAL SOCIETY OF KOREA, 19권 3호, 311~316, 2015.
- Size-dependence of plasmonic Au nanoparticles in photocatalytic behavior of Au/TiO2 and Au@SiO2/TiO2, APPLIED CATALYSIS A-GENERAL, 499, 47~54, 2015.
- Polarization-Engineered High-Efficiency GaInN Light-Emitting Diodes Optimized by Genetic Algorithm, IEEE PHOTONICS JOURNAL, 7권 1호, 1300209-1~1300209-10, 2015.
- GaN LED 연구의 역사, 물리학과첨단기술, , 8~15, 2014.
- Strong Modification of Spontaneous Emission Rate in Nanorod Light-Emitting Diode Structures, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 14권 11호, 8377~8381, 2014.
- Ideality Factor of GaN-based Light-emitting Diodes Determined by the Measurement of Photovoltaic Characteristics, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 65권 10호, 1639~1643, 2014.
- Electroreflectance spectroscopy of compressively strained InGaN/GaN multi-quantum well structures, CURRENT APPLIED PHYSICS, 14권 11호, 1504~1508, 2014.
- High Efficiency InGaN Blue Light-Emitting Diode With >4-W Output Power at 3 A, IEEE PHOTONICS TECHNOLOGY LETTERS, 26권 7호, 649~652, 2014.
- Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures, NANOSCALE RESEARCH LETTERS, 9, , 2014.
- Numerical study on the wavelength-dependence of light extraction efficiency in AlGaN-based ultraviolet light-emitting diodes, OPTICAL AND QUANTUM ELECTRONICS, 46, 1329~1335, 2014.
- InGaN 기반 청색 LED 및 녹색 LED 구조의 광기전 변환효율 특성, LED학회지, 5권 2호, 41~47, 2013.
- Optimization of InGaN/GaN superlattice structures for high-efficiency vertical blue light-emitting diodes, JOURNAL OF APPLIED PHYSICS, 114권 17호, , 2013.
- Investigation of Light Extraction Efficiency and Internal Quantum Efficiency in High-Power Vertical Blue Light-Emitting Diode with 3.3 W Output Power, JAPANESE JOURNAL OF APPLIED PHYSICS, 52, , 2013.
- Internal quantum efficiency of GaN-based light-emitting diodes grown on silicon substrates determined from rate equation analyses, CURRENT APPLIED PHYSICS, 13, 1600~1603, 2013.
- Evaluation of the internal quantum efficiency in blue and green light-emitting diodes using the rate equation model, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 63권 2호, 180~184, 2013.
- Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes, APPLIED PHYSICS EXPRESS, 6권 6호, , 2013.
- GaN 기반 청색 LED 및 백색 LED의 온도에 따른 효율 특성 측정, LED학회지, 5권 1호, 44~50, 2013.
- Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers, APPLIED PHYSICS LETTERS, 102권 18호, , 2013.
- Analysis on the Luminous Efficiency of Phosphor-Conversion White Light-Emitting Diode, JOURNAL OF THE OPTICAL SOCIETY OF KOREA, 17권 1호, 22~26, 2013.
- Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer, OPTICS EXPRESS, 21권 1호, 190~200, 2013.
- Simulation of the effects of AlGaN electron-blocking layers on the characteristics of InGaN blue light-emitting diodes, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 61권 9호, 1395~1399, 2012.
- High-power single-chip InGaN blue light-emitting diode with 3.3 W output power, ELECTRONICS LETTERS, 48권 21호, 1358~1359, 2012.
- Analysis of below-threshold efficiency characteristics of InGaN-based blue laser diodes, JOURNAL OF APPLIED PHYSICS, 112권 8호, , 2012.
- Effect of Internal Polarization Fields in InGaN/GaN Multiple-Quantum Wells on the Efficiency of Blue Light-Emitting Diodes, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, , 2012.
- Estimate of the Nonradiative Carrier Lifetime in InGaN/GaN Quantum Well Structures by Using Time-resolved Photoluminescence, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 60권 11호, 1934~1938, 2012.
- Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes, IEEE JOURNAL OF QUANTUM ELECTRONICS, 48권 4호, 500~506, 2012.
- Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material, APPLIED PHYSICS LETTERS, 100권 13호, , 2012.
- Investigation of the Radiative Efficiency and Threshold in InGaN Laser Diodes under the Influence of Efficiency Droop, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 60권 5호, 754~758, 2012.
- Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures, IEEE PHOTONICS TECHNOLOGY LETTERS, 23권 24호, 1866~1868, 2011.
- Diode and photocurrent effect in ferroelectric BaTiO(3-delta), JOURNAL OF APPLIED PHYSICS, 109권 8호, , 2011.
- Subwavelength Optical Resonant Cavity-Induced Enhancement of the Near-Band-Edge Emission from ZnO-Core/SnO(2)-Shell Nanorods, JOURNAL OF PHYSICAL CHEMISTRY C, 115권 17호, 8513~8518, 2011.
- Extraction Efficiency in GaN Nanorod Light-emitting Diodes Investigated by Finite-difference Time-domain Simulation, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 58, 878~882, 2011.
- An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 58권 3호, 503~508, 2011.
- Effect of current spreading on the efficiency droop of InGaN light-emitting diodes, OPTICS EXPRESS, 19권 4호, 2886~2894, 2011.
- Investigation of the Carrier Distribution Characteristics in InGaN Multiple Quantum Wells by Using Dual-wavelength Light-emitting Diodes, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 58권 2호, 311~315, 2011.
- High-brightness Phosphor-conversion White Light Source Using InGaN Blue Laser Diode, JOURNAL OF THE OPTICAL SOCIETY OF KOREA, 14권 4호, 415~419, 2010.
- Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation, JAPANESE JOURNAL OF APPLIED PHYSICS, 49권 11호, 112402-1~112402-4, 2010.
- Effects of Nanometer-Scale Photonic Crystal Structures on the Light Extraction From GaN Light-Emitting Diodes, IEEE JOURNAL OF QUANTUM ELECTRONICS, 46권 9호, 1375~1380, 2010.
- Structural Parameter Dependence of Light Extraction Efficiency in Photonic Crystal InGaN Vertical Light-Emitting Diode Structures, IEEE JOURNAL OF QUANTUM ELECTRONICS, 46권 5호, 714~720, 2010.
- Electroluminescence Study of Inhomogeneous Carrier Distribution in InGaN Multiple-quantum-well Light-emitting Diode Structures, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 56권 4호, 1256~1260, 2010.
- Effect of Ridge Passivation Layers on the Optical Characteristics of InGaN Laser Diodes, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 56권 4호, 1350~1354, 2010.
- High Efficiency GaN Light-Emitting Diodes With Two Dimensional Photonic Crystal Structures of Deep-Hole Square Lattices, IEEE JOURNAL OF QUANTUM ELECTRONICS, 46권 1호, 116~120, 2010.
- Large Enhancement of Extraction Efficiency in Thin-Film Photonic Crystal InGaN Light-Emitting Diode Structures, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 55권 6호, 2642~2645, 2009.
- Improved thermal characteristic of InGaN laser diodes with AlGaN ridge passivation layer, ELECTRONICS LETTERS, 45권 25호, 1318~1319, 2009.
- Modification of the Light Extraction Efficiency in Micro-cavity Vertical InGaN Light-emitting Diode Structures, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 55권 3호, 1267~1271, 2009.
- Rate equation analysis of efficiency droop in InGaN light-emitting diodes, APPLIED PHYSICS LETTERS, 95권 8호, 081114-1~081114-3, 2009.
- Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n-cladding layer, JOURNAL OF APPLIED PHYSICS, 105권 10호, 103102-1~103102-4, 2009.
- Cavity-length dependent thermal characteristics of InGaN blue laser diodes, ELECTRONICS LETTERS, 45, 164~165, 2009.
- Behaviors of emission wavelength shift in AlInGaN-based green laser diodes, IEEE ELECTRON DEVICE LETTERS, 29, 870~872, 2008.
- Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes, OPTICS EXPRESS, 16, 10849~10857, 2008.
- Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics, APPLIED PHYSICS LETTERS, 93, , 2008.
- Effect of ridge shape on the fundamental single-mode operation of InGaN laser diode structures, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 52, 1779~1785, 2008.
- Measurement of optical loss variation on thickness of InGaN optical confinement layers of blue-violet-emitting laser diodes, JOURNAL OF APPLIED PHYSICS, 103, , 2008.
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